Track 8: Wide Bandgap Semiconductors & Power Integration

This special session focuses on wide bandgap semiconductors, including Gallium Nitride (GaN), Silicon Carbide (SiC), Gallium Oxide (Ga2O3), Diamond, and their related power integration technologies. Driven by the critical demands for high-efficiency energy conversion and wideband, high-speed data transmission in fields such as AI data centers, digital energy, and 5G/6G, the technical scope covers both power and RF application domains. This forum encompasses multi-disciplinary research ranging from wide bandgap semiconductor materials, devices, monolithic integration, and heterogeneous integration, to reliability evaluation. It aims to build a collaborative exchange platform bridging academic innovation and industrial implementation, thereby accelerating the deployment and development of wide bandgap technologies in emerging industries.

本专题论坛聚焦氮化镓、碳化硅、氧化镓、金刚石等宽禁带半导体与集成技术领域。面向AI数据中心、数字能源、5G/6G等领域对高效率能源转换、宽带高速数据传输等需求，专题技术包含宽禁带半导体功率和射频领域。本论坛涵盖宽禁带半导体材料、器件、单片集成、异质集成、可靠性等方面的研究，旨在为宽禁带半导体发展搭建一个融合学术创新与产业应用的交流平台，推动其在新兴领域的应用。